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Silicon Junction FETs (Small Signal)
2SK3546J
Silicon N-Channel MOSFET
For switching Features
0.270.02 (0.50)(0.50) 1.60+0.05 -0.03 1.000.05 3
0.800.05
Unit: mm
0.12+0.03 -0.01
1.600.05
0.85+0.05 -0.03
0 to 0.02
Parameter Drain-source voltage Gate-source voltage (Drain open) Drain current Peak drain current Power dissipation Channel temperature Storage temperature
Symbol VDS VGSO ID IDP PD Tch Tstg
Rating 50 7 100 200 125 125 -55 to +125
Unit V
5
mA mA mW C C
1: Gate 2: Source 3: Drain SSMini3-F1 Package
Marking Symbol: 5F
Electrical Characteristics Ta = 25C 3C
Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss ton toff Conditions ID = 10 A, VGS = 0 VDS = 50 V, VGS = 0 VGS = 7 V, VDS = 0 ID = 1.0 A, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V Forward transfer admittance Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on time * Turn-off time
*
Min 50
Typ
Max
Unit V A A V mS pF pF pF ns ns
1.0 5.0 0.9 1.2 8 6 20 60 12 7 3 200 200 1.5 15 12
ID = 10 mA, VDS = 3 V, f = 1 kHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, VGS = 0 V to 3 V, RL = 470 VDD = 3 V, VGS = 3 V to 0 V, RL = 470
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: ton, toff test circuit VOUT 470 90% 10% VIN VGS = 3.0 V VDD = 3 V VOUT 10% 50 90%
100 F
ton
Publication date: July 2003 SJF00037AED
toff
0.10 max.
V
0.70+0.05 -0.03
Absolute Maximum Ratings Ta = 25C
(0.80)
* High-speed switching * Wide frequency band
1
2
5
(0.375)
1
2SK3546J
PD Ta
140 120
70 60 2.4 V 200
ID VDS
VGS = 2.5 V 250 VDS = 3 V
ID VGS
Ta = -25C 25C 85C 150
Power dissipation PD (mW)
Drain current ID (mA)
100 80 60 40 20 0
50 2.3 V 40 30 20 10 0 Ta = 25C 0 2 4 6 8 10 12 2.2 V 2.1 V 2.0 V
Drain current ID (mA)
100
50
0 0
0
40
80
120
1
2
3
4
5
6
Ambient temperature Ta (C)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Yfs VGS
0.16
RDS(on) VGS
60 ID = 10 mA
VIN IO
10 VO = 5 V Ta = 25C
Forward transfer admittance Yfs (S)
0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0
Drain-source ON resistance RDS(on) ()
VDS = 3 V f = 1 kHz Ta = 25C
50
40
30
20 25C 10 Ta = 85C -25C 0 2 4 6
1
2
3
4
0
Input voltage VIN (V)
1 0.1
1
10
100
Gate-source voltage VGS (V)
Gate-source voltage VGS (V)
Output current IO (mA)
2
SJF00037AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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